JANSR2N7262
vs
IRHF7230PBF
feature comparison
Rohs Code |
|
Yes
|
Part Life Cycle Code |
|
Active
|
Ihs Manufacturer |
|
INFINEON TECHNOLOGIES AG
|
Package Description |
|
CYLINDRICAL, O-MBCY-W3
|
Reach Compliance Code |
|
compliant
|
ECCN Code |
|
EAR99
|
Additional Feature |
|
RADIATION HARDENED
|
Avalanche Energy Rating (Eas) |
|
240 mJ
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
200 V
|
Drain Current-Max (ID) |
|
5.5 A
|
Drain-source On Resistance-Max |
|
0.36 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
|
TO-39
|
JESD-30 Code |
|
O-MBCY-W3
|
Number of Elements |
|
1
|
Number of Terminals |
|
3
|
Operating Mode |
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
|
150 °C
|
Package Body Material |
|
METAL
|
Package Shape |
|
ROUND
|
Package Style |
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Polarity/Channel Type |
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
|
22 A
|
Surface Mount |
|
NO
|
Terminal Form |
|
WIRE
|
Terminal Position |
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
Base Number Matches |
|
1
|
|
|
|
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