JANSR2N7550U2
vs
JANSR2N7550U2
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
CHIP CARRIER, R-CBCC-N3
|
CHIP CARRIER, R-CBCC-N3
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
ULTRA-LOW RESISTANCE
|
ULTRA-LOW RESISTANCE
|
Avalanche Energy Rating (Eas) |
400 mJ
|
400 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
47 A
|
47 A
|
Drain-source On Resistance-Max |
0.049 Ω
|
0.049 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CBCC-N3
|
R-CBCC-N3
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
250 W
|
250 W
|
Pulsed Drain Current-Max (IDM) |
188 A
|
188 A
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500; RH - 100K Rad(Si)
|
MIL-19500; RH - 100K Rad(Si)
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Pbfree Code |
|
No
|
Pin Count |
|
3
|
|
|
|