JANTX2N6760
vs
2N6760TX
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
INTERSIL CORP
|
| Part Package Code |
TO-3
|
|
| Package Description |
TO-3, 2 PIN
|
FLANGE MOUNT, O-MBFM-P2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
5.5 A
|
5.5 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
75 W
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
10
|
3
|
| HTS Code |
|
8541.29.00.95
|
| Additional Feature |
|
RADIATION HARDENED
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
400 V
|
| Drain-source On Resistance-Max |
|
1 Ω
|
| Feedback Cap-Max (Crss) |
|
80 pF
|
| JEDEC-95 Code |
|
TO-204AA
|
| JESD-30 Code |
|
O-MBFM-P2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
FLANGE MOUNT
|
| Power Dissipation Ambient-Max |
|
75 W
|
| Pulsed Drain Current-Max (IDM) |
|
8 A
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MILITARY STANDARD (USA)
|
| Terminal Form |
|
PIN/PEG
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Max (toff) |
|
90 ns
|
| Turn-on Time-Max (ton) |
|
65 ns
|
|
|
|
Compare 2N6760TX with alternatives