JANTXV2N3637 vs JAN2N3637L feature comparison

JANTXV2N3637 Raytheon Semiconductor

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JAN2N3637L Defense Logistics Agency

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer RAYTHEON SEMICONDUCTOR DEFENSE LOGISTICS AGENCY
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
JEDEC-95 Code TO-39 TO-5
JESD-30 Code O-MBCY-W3 O-MBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Qualified
Reference Standard MIL MIL-19500/357H
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description TO-5, 3 PIN
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 175 V
DC Current Gain-Min (hFE) 60
Turn-off Time-Max (toff) 650 ns
Turn-on Time-Max (ton) 200 ns

Compare JANTXV2N3637 with alternatives

Compare JAN2N3637L with alternatives