JANTXV2N3637
vs
JANTXV2N3637
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
RAYTHEON SEMICONDUCTOR
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| JEDEC-95 Code |
TO-39
|
TO-39
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL
|
MIL-19500/357H
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
4
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Part Package Code |
|
BCY
|
| Package Description |
|
TO-39, 3 PIN
|
| Pin Count |
|
2
|
| Samacsys Manufacturer |
|
Microsemi Corporation
|
| Collector Current-Max (IC) |
|
1 A
|
| Collector-Emitter Voltage-Max |
|
175 V
|
| DC Current Gain-Min (hFE) |
|
60
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation-Max (Abs) |
|
1 W
|
| Terminal Finish |
|
TIN LEAD
|
| Transition Frequency-Nom (fT) |
|
200 MHz
|
| Turn-off Time-Max (toff) |
|
650 ns
|
| Turn-on Time-Max (ton) |
|
200 ns
|
|
|
|
Compare JANTXV2N3637 with alternatives
Compare JANTXV2N3637 with alternatives