JANTXV2N3637
vs
2N3637
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Contact Manufacturer
|
Contact Manufacturer
|
| Ihs Manufacturer |
SEMICOA CORP
|
SEMICONDUCTOR TECHNOLOGY INC
|
| Part Package Code |
BCY
|
TO-5
|
| Package Description |
TO-39, 3 PIN
|
TO-5, 3 PIN
|
| Pin Count |
2
|
3
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Emitter Voltage-Max |
175 V
|
175 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
60
|
100
|
| JEDEC-95 Code |
TO-205AD
|
TO-5
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
1 W
|
1 W
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500/357
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
200 MHz
|
| Base Number Matches |
3
|
1
|
| Pbfree Code |
|
No
|
|
|
|
Compare JANTXV2N3637 with alternatives
Compare 2N3637 with alternatives