JANTXV2N3867 vs 2N3867E3 feature comparison

JANTXV2N3867 New England Semiconductor

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2N3867E3 Microsemi Corporation

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75
Collector Current-Max (IC) 3 A 3 A
Collector-Emitter Voltage-Max 40 V 40 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 20 20
JEDEC-95 Code TO-5 TO-5
JESD-30 Code O-MBCY-W3 O-MBCY-W3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 200 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type PNP PNP
Power Dissipation Ambient-Max 6 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Reference Standard MIL-19500/350
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 60 MHz 60 MHz
Turn-off Time-Max (toff) 600 ns 600 ns
Turn-on Time-Max (ton) 100 ns 100 ns
Base Number Matches 11 1
Package Description TO-5, 3 PIN
Additional Feature HIGH RELIABILITY

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