JANTXV2N6790
vs
JANTX2N6790
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
DEFENSE LOGISTICS AGENCY
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
RADIATION HARDENED
|
RADIATION HARDENED
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
3.5 A
|
3.5 A
|
Drain-source On Resistance-Max |
0.8 Ω
|
0.8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
14 A
|
14 A
|
Qualification Status |
Qualified
|
Qualified
|
Reference Standard |
MILITARY STANDARD (USA)
|
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
|
|
|
Compare JANTXV2N6790 with alternatives
Compare JANTX2N6790 with alternatives