JANTXV2N6790
vs
2N6790
feature comparison
Part Life Cycle Code |
Obsolete
|
|
Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
|
Reach Compliance Code |
unknown
|
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
RADIATION HARDENED
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
200 V
|
|
Drain Current-Max (ID) |
3.5 A
|
|
Drain-source On Resistance-Max |
0.8 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss) |
80 pF
|
|
JEDEC-95 Code |
TO-205AF
|
|
JESD-30 Code |
O-MBCY-W3
|
|
Number of Elements |
1
|
|
Number of Terminals |
3
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
METAL
|
|
Package Shape |
ROUND
|
|
Package Style |
CYLINDRICAL
|
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation Ambient-Max |
20 W
|
|
Pulsed Drain Current-Max (IDM) |
14 A
|
|
Qualification Status |
Not Qualified
|
|
Reference Standard |
MILITARY STANDARD (USA)
|
|
Surface Mount |
NO
|
|
Terminal Finish |
NOT SPECIFIED
|
|
Terminal Form |
WIRE
|
|
Terminal Position |
BOTTOM
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Turn-off Time-Max (toff) |
100 ns
|
|
Turn-on Time-Max (ton) |
90 ns
|
|
Base Number Matches |
1
|
|
|
|
|
Compare JANTXV2N6790 with alternatives