JANTXV2N6790 vs JANTX2N6790 feature comparison

JANTXV2N6790 Infineon Technologies AG

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JANTX2N6790 Harris Semiconductor

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Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG HARRIS SEMICONDUCTOR
Package Description TO-39, 3 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED RADIATION HARDENED
Avalanche Energy Rating (Eas) 0.242 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 3.5 A 3.5 A
Drain-source On Resistance-Max 0.85 Ω 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF TO-205AF
JESD-30 Code O-MBCY-W3 O-MBCY-W3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 20 W
Pulsed Drain Current-Max (IDM) 14 A 14 A
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/555 MILITARY STANDARD (USA)
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) NOT SPECIFIED
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
HTS Code 8541.29.00.95
Case Connection DRAIN
Feedback Cap-Max (Crss) 80 pF
Power Dissipation Ambient-Max 20 W
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 90 ns

Compare JANTXV2N6790 with alternatives

Compare JANTX2N6790 with alternatives