JANTXV2N6790
vs
IRFF220-JQR-BR1
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
SEMELAB LTD
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
3.5 A
|
3.5 A
|
Drain-source On Resistance-Max |
0.8 Ω
|
0.8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-CQCC-N18
|
O-MBCY-W3
|
JESD-609 Code |
e0
|
e1
|
Number of Elements |
1
|
1
|
Number of Terminals |
18
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
METAL
|
Package Shape |
SQUARE
|
ROUND
|
Package Style |
CHIP CARRIER
|
CYLINDRICAL
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
20 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MILITARY STANDARD (USA)
|
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN SILVER COPPER
|
Terminal Form |
NO LEAD
|
WIRE
|
Terminal Position |
QUAD
|
BOTTOM
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
BCY
|
Package Description |
|
CYLINDRICAL, O-MBCY-W3
|
Pin Count |
|
2
|
JEDEC-95 Code |
|
TO-205AF
|
|
|
|
Compare JANTXV2N6790 with alternatives
Compare IRFF220-JQR-BR1 with alternatives