JANTXV2N6796
vs
JANTX2N6796
feature comparison
Part Life Cycle Code |
|
Contact Manufacturer
|
Ihs Manufacturer |
|
SEMICOA CORP
|
Package Description |
|
HERMETIC SEALED, TO-39, 3 PIN
|
Reach Compliance Code |
|
unknown
|
ECCN Code |
|
EAR99
|
Avalanche Energy Rating (Eas) |
|
75 mJ
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
100 V
|
Drain Current-Max (ID) |
|
8 A
|
Drain-source On Resistance-Max |
|
0.195 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
|
TO-205AF
|
JESD-30 Code |
|
O-MBCY-W3
|
Number of Elements |
|
1
|
Number of Terminals |
|
3
|
Operating Mode |
|
ENHANCEMENT MODE
|
Package Body Material |
|
METAL
|
Package Shape |
|
ROUND
|
Package Style |
|
CYLINDRICAL
|
Polarity/Channel Type |
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
|
32 A
|
Qualification Status |
|
Not Qualified
|
Reference Standard |
|
MIL-19500
|
Surface Mount |
|
NO
|
Terminal Form |
|
WIRE
|
Terminal Position |
|
BOTTOM
|
Transistor Application |
|
AMPLIFIER
|
Transistor Element Material |
|
SILICON
|
Base Number Matches |
|
1
|
|
|
|
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