JANTXV2N6796
vs
2N6796
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
|
| Ihs Manufacturer |
INTERSIL CORP
|
|
| Reach Compliance Code |
not_compliant
|
|
| ECCN Code |
EAR99
|
|
| Additional Feature |
RADIATION HARDENED
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
8 A
|
|
| Drain-source On Resistance-Max |
0.18 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JEDEC-95 Code |
TO-205AF
|
|
| JESD-30 Code |
O-MBCY-W3
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
25 W
|
|
| Pulsed Drain Current-Max (IDM) |
32 A
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MILITARY STANDARD (USA)
|
|
| Surface Mount |
NO
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
|
|
|
|
Compare JANTXV2N6796 with alternatives