JANTXV2N6796
vs
2N6796
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
|
| Ihs Manufacturer |
SEMICOA CORP
|
|
| Package Description |
HERMETIC SEALED, TO-39, 3 PIN
|
|
| Reach Compliance Code |
unknown
|
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| ECCN Code |
EAR99
|
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| Avalanche Energy Rating (Eas) |
75 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
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|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
8 A
|
|
| Drain-source On Resistance-Max |
0.195 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
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| JEDEC-95 Code |
TO-205AF
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| JESD-30 Code |
O-MBCY-W3
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| Number of Elements |
1
|
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| Number of Terminals |
3
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| Operating Mode |
ENHANCEMENT MODE
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| Package Body Material |
METAL
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| Package Shape |
ROUND
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| Package Style |
CYLINDRICAL
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| Polarity/Channel Type |
N-CHANNEL
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| Pulsed Drain Current-Max (IDM) |
32 A
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| Qualification Status |
Not Qualified
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| Reference Standard |
MIL-19500
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| Surface Mount |
NO
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| Terminal Form |
WIRE
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| Terminal Position |
BOTTOM
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| Transistor Application |
AMPLIFIER
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| Transistor Element Material |
SILICON
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| Base Number Matches |
1
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