JANTXV2N6845
vs
2N6845-QR-B
feature comparison
| Rohs Code |
|
No
|
| Part Life Cycle Code |
|
Obsolete
|
| Ihs Manufacturer |
|
TT ELECTRONICS PLC
|
| Package Description |
|
CYLINDRICAL, O-MBCY-W3
|
| Reach Compliance Code |
|
compliant
|
| ECCN Code |
|
EAR99
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
100 V
|
| Drain Current-Max (ID) |
|
4 A
|
| Drain-source On Resistance-Max |
|
0.69 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
|
TO-205AF
|
| JESD-30 Code |
|
O-MBCY-W3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Polarity/Channel Type |
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
|
16 A
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Element Material |
|
SILICON
|
| Base Number Matches |
|
2
|
|
|
|
Compare 2N6845-QR-B with alternatives