JANTXV2N6849
vs
JANTX2N6849
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Transferred
|
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
|
Part Package Code |
BCY
|
|
Package Description |
HERMETIC SEALED, TO-39, 3 PIN
|
|
Pin Count |
2
|
|
Reach Compliance Code |
compliant
|
|
ECCN Code |
EAR99
|
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
92 mJ
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
100 V
|
|
Drain Current-Max (ID) |
6.5 A
|
|
Drain-source On Resistance-Max |
0.345 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code |
TO-205AF
|
|
JESD-30 Code |
O-MBCY-W3
|
|
Number of Elements |
1
|
|
Number of Terminals |
3
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Package Body Material |
METAL
|
|
Package Shape |
ROUND
|
|
Package Style |
CYLINDRICAL
|
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
P-CHANNEL
|
|
Pulsed Drain Current-Max (IDM) |
25 A
|
|
Qualification Status |
Qualified
|
|
Reference Standard |
MIL-19500/564
|
|
Surface Mount |
NO
|
|
Terminal Form |
WIRE
|
|
Terminal Position |
BOTTOM
|
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
2
|
|
|
|
|
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