JANTXV2N7227
vs
IRFN350
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
ADVANCED POWER TECHNOLOGY INC
|
INFINEON TECHNOLOGIES AG
|
Package Description |
TO-254, 3 PIN
|
HERMETIC SEALED, SMD1, 3 PIN
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
AVALANCHE RATED
|
HIGH RELIABILITY
|
Avalanche Energy Rating (Eas) |
700 mJ
|
700 mJ
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
400 V
|
400 V
|
Drain Current-Max (ID) |
14 A
|
14 A
|
Drain-source On Resistance-Max |
0.315 Ω
|
0.415 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-254AA
|
|
JESD-30 Code |
S-MSFM-P3
|
R-CBCC-N3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
METAL
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
150 W
|
|
Power Dissipation-Max (Abs) |
150 W
|
75 W
|
Pulsed Drain Current-Max (IDM) |
56 A
|
56 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MIL
|
MIL-19500/592
|
Surface Mount |
NO
|
YES
|
Terminal Form |
PIN/PEG
|
NO LEAD
|
Terminal Position |
SINGLE
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
No
|
JESD-609 Code |
|
e0
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare JANTXV2N7227 with alternatives
Compare IRFN350 with alternatives