JANTXV2N7227
vs
JANTXV2N7227
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ADVANCED POWER TECHNOLOGY INC
|
HARRIS SEMICONDUCTOR
|
| Package Description |
TO-254, 3 PIN
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
8541.29.00.95
|
| Additional Feature |
AVALANCHE RATED
|
RADIATION HARDENED
|
| Avalanche Energy Rating (Eas) |
700 mJ
|
|
| Case Connection |
ISOLATED
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
400 V
|
400 V
|
| Drain Current-Max (ID) |
14 A
|
14 A
|
| Drain-source On Resistance-Max |
0.315 Ω
|
0.315 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-254AA
|
TO-254AA
|
| JESD-30 Code |
S-MSFM-P3
|
S-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
150 W
|
150 W
|
| Power Dissipation-Max (Abs) |
150 W
|
|
| Pulsed Drain Current-Max (IDM) |
56 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL
|
MILITARY STANDARD (USA)
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Terminal Finish |
|
NOT SPECIFIED
|
|
|
|
Compare JANTXV2N7227 with alternatives
Compare JANTXV2N7227 with alternatives