JANTXV2N7227
vs
IRFN350
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Additional Feature |
RADIATION HARDENED
|
HIGH RELIABILITY
|
| Case Connection |
DRAIN
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
400 V
|
400 V
|
| Drain Current-Max (ID) |
14 A
|
14 A
|
| Drain-source On Resistance-Max |
0.315 Ω
|
0.415 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-254AA
|
|
| JESD-30 Code |
S-PSFM-T3
|
R-CBCC-N3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
CHIP CARRIER
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
150 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MILITARY STANDARD (USA)
|
MIL-19500/592
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
NOT SPECIFIED
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
THROUGH-HOLE
|
NO LEAD
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Package Description |
|
HERMETIC SEALED, SMD1, 3 PIN
|
| Avalanche Energy Rating (Eas) |
|
700 mJ
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
75 W
|
| Pulsed Drain Current-Max (IDM) |
|
56 A
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare JANTXV2N7227 with alternatives
Compare IRFN350 with alternatives