JANTXV2N7227 vs JANTXV2N7227 feature comparison

JANTXV2N7227 Harris Semiconductor

Buy Now Datasheet

JANTXV2N7227 Microsemi Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature RADIATION HARDENED AVALANCHE RATED
Case Connection DRAIN ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 400 V 400 V
Drain Current-Max (ID) 14 A 14 A
Drain-source On Resistance-Max 0.315 Ω 0.315 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA TO-254AA
JESD-30 Code S-PSFM-T3 S-MSFM-P3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY METAL
Package Shape SQUARE SQUARE
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 150 W
Qualification Status Not Qualified Qualified
Reference Standard MILITARY STANDARD (USA) MIL
Surface Mount NO NO
Terminal Finish NOT SPECIFIED TIN LEAD
Terminal Form THROUGH-HOLE PIN/PEG
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Rohs Code No
Part Package Code TO-254AA
Package Description TO-254, 3 PIN
Pin Count 3
Samacsys Manufacturer Microsemi Corporation
Avalanche Energy Rating (Eas) 700 mJ
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 56 A
Transistor Application SWITCHING

Compare JANTXV2N7227 with alternatives

Compare JANTXV2N7227 with alternatives