K9F5608R0D-JIB0 vs NAND256R3A3DZA1E feature comparison

K9F5608R0D-JIB0 Samsung Semiconductor

Buy Now Datasheet

NAND256R3A3DZA1E STMicroelectronics

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC STMICROELECTRONICS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 35 ns 15000 ns
Command User Interface YES
Data Polling NO
JESD-30 Code R-PBGA-B63 R-PBGA-B63
JESD-609 Code e3
Memory Density 268435456 bit 268435456 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Moisture Sensitivity Level 1
Number of Sectors/Size 2K
Number of Terminals 63 63
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 32MX8 32MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code FBGA BGA
Package Equivalence Code BGA63,10X12,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, FINE PITCH GRID ARRAY
Page Size 512 words
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Ready/Busy YES
Sector Size 16K
Standby Current-Max 0.00005 A
Supply Current-Max 0.02 mA
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form BALL BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM BOTTOM
Toggle Bit NO
Base Number Matches 1 2
Part Package Code BGA
Package Description BGA,
Pin Count 63
Number of Functions 1
Operating Mode ASYNCHRONOUS
Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 1.8 V
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.65 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare K9F5608R0D-JIB0 with alternatives

Compare NAND256R3A3DZA1E with alternatives