KM41C1000AP-8 vs MT4C1026-10 feature comparison

KM41C1000AP-8 Samsung Semiconductor

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MT4C1026-10 Micron Technology Inc

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC MICRON TECHNOLOGY INC
Package Description DIP, DIP18,.3 0.300 INCH, PLASTIC, DIP-18
Reach Compliance Code compliant not_compliant
Access Time-Max 80 ns 100 ns
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PDIP-T18 R-PDIP-T18
JESD-609 Code e0 e0
Memory Density 1048576 bit 1048576 bit
Memory IC Type FAST PAGE DRAM STATIC COLUMN DRAM
Memory Width 1 1
Moisture Sensitivity Level 3
Number of Terminals 18 18
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 1MX1 1MX1
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP18,.3 DIP18,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Peak Reflow Temperature (Cel) 260
Power Supplies 5 V
Qualification Status Not Qualified Not Qualified
Refresh Cycles 512 512
Standby Current-Max 0.001 A 0.001 A
Supply Current-Max 0.07 mA 0.06 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 1 2
Part Package Code DIP
Pin Count 18
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode STATIC COLUMN
Additional Feature RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
Length 22.095 mm
Number of Functions 1
Number of Ports 1
Operating Mode ASYNCHRONOUS
Seated Height-Max 4.32 mm
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Width 7.62 mm

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Compare MT4C1026-10 with alternatives