KSC3120TR
vs
2SC3512
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
RENESAS ELECTRONICS CORP
|
| Part Package Code |
SOT-23
|
TO-92
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
CYLINDRICAL, O-PBCY-T3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector-Base Capacitance-Max |
0.9 pF
|
1.6 pF
|
| Collector-Emitter Voltage-Max |
15 V
|
11 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
40
|
50
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
2400 MHz
|
6000 MHz
|
| Base Number Matches |
1
|
5
|
| Collector Current-Max (IC) |
|
0.05 A
|
| JEDEC-95 Code |
|
TO-92
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.6 W
|
|
|
|
Compare KSC3120TR with alternatives
Compare 2SC3512 with alternatives