KST5551MTF vs PMBT5550/T3 feature comparison

KST5551MTF Rochester Electronics LLC

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PMBT5550/T3 NXP Semiconductors

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Pbfree Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NXP SEMICONDUCTORS
Reach Compliance Code unknown unknown
Collector Current-Max (IC) 0.6 A 0.3 A
Collector-Emitter Voltage-Max 160 V 140 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 20
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 100 MHz
Base Number Matches 3 2
Rohs Code Yes
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
ECCN Code EAR99
Collector-Base Capacitance-Max 6 pF
JEDEC-95 Code TO-236AB
Operating Temperature-Max 150 °C
VCEsat-Max 0.25 V

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