LAE4002S
vs
LTE4002S
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
MICROWAVE, S-CQMW-F4
|
FLANGE MOUNT, R-CDFM-F2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
|
HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR
|
| Case Connection |
EMITTER
|
EMITTER
|
| Collector Current-Max (IC) |
0.09 A
|
0.09 A
|
| Collector-Emitter Voltage-Max |
16 V
|
16 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| Highest Frequency Band |
S BAND
|
S BAND
|
| JESD-30 Code |
S-CQMW-F4
|
R-CDFM-F2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
2
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
MICROWAVE
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
QUAD
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Operating Temperature-Max |
|
200 °C
|
| Power Dissipation-Max (Abs) |
|
1 W
|
|
|
|