LF157AD/883B vs LF357BN feature comparison

LF157AD/883B Raytheon Semiconductor

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LF357BN National Semiconductor Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RAYTHEON SEMICONDUCTOR NATIONAL SEMICONDUCTOR CORP
Package Description CERAMIC, DIP-8 DIP, DIP8,.3
Reach Compliance Code unknown unknown
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Average Bias Current-Max (IIB) 0.025 µA 0.0001 µA
Common-mode Reject Ratio-Nom 100 dB 100 dB
Input Offset Voltage-Max 2500 µV 6500 µV
JESD-30 Code R-CDIP-T8 R-PDIP-T8
Neg Supply Voltage-Nom (Vsup) -15 V -20 V
Number of Functions 1 1
Number of Terminals 8 8
Operating Temperature-Max 125 °C 70 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Slew Rate-Nom 60 V/us 50 V/us
Supply Current-Max 7 mA 7 mA
Supply Voltage-Nom (Vsup) 15 V 20 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade MILITARY COMMERCIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Unity Gain BW-Nom 30000 20000
Base Number Matches 1 4
Rohs Code No
Part Package Code DIP
Pin Count 8
ECCN Code EAR99
HTS Code 8542.33.00.01
Architecture VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.0001 µA
Common-mode Reject Ratio-Min 85 dB
Frequency Compensation YES (AVCL>=5)
JESD-609 Code e0
Length 9.817 mm
Low-Bias YES
Low-Offset NO
Neg Supply Voltage Limit-Max -22 V
Package Code DIP
Package Equivalence Code DIP8,.3
Seated Height-Max 5.08 mm
Slew Rate-Min 30 V/us
Supply Voltage Limit-Max 22 V
Terminal Finish TIN LEAD
Terminal Pitch 2.54 mm
Voltage Gain-Min 25000
Width 7.62 mm

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