LF357N vs LF357AJ feature comparison

LF357N General Electric Solid State

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LF357AJ Harris Semiconductor

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer GENERAL ELECTRIC SOLID STATE HARRIS SEMICONDUCTOR
Package Description DIP-8 DIP, DIP8,.3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.0002 µA 0.00005 µA
Frequency Compensation YES (AVCL>=5) YES (AVCL>=5)
Input Offset Voltage-Max 13000 µV 2300 µV
JESD-30 Code R-PDIP-T8 R-XDIP-T8
JESD-609 Code e0 e0
Low-Bias YES YES
Low-Offset NO NO
Neg Supply Voltage-Nom (Vsup) -15 V
Number of Functions 1 1
Number of Terminals 8 8
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Package Body Material PLASTIC/EPOXY CERAMIC
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Voltage-Nom (Vsup) 15 V
Surface Mount NO NO
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 10 4

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