LM108D vs LM108N-14 feature comparison

LM108D Raytheon Semiconductor

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LM108N-14 Signetics

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RAYTHEON SEMICONDUCTOR SIGNETICS CORP
Package Description DIP, DIP8,.3 DIP,
Reach Compliance Code unknown unknown
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK
Average Bias Current-Max (IIB) 0.003 µA
Bias Current-Max (IIB) @25C 0.002 µA
Common-mode Reject Ratio-Min 85 dB
Common-mode Reject Ratio-Nom 100 dB
Frequency Compensation NO
Input Offset Voltage-Max 3000 µV
JESD-30 Code R-GDIP-T8 R-PDIP-T8
JESD-609 Code e0
Low-Offset NO
Neg Supply Voltage Limit-Max -20 V
Neg Supply Voltage-Nom (Vsup) -15 V
Number of Functions 1
Number of Terminals 8 8
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, GLASS-SEALED PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 0.6 mA
Supply Voltage Limit-Max 20 V
Supply Voltage-Nom (Vsup) 15 V
Surface Mount NO NO
Technology BIPOLAR
Temperature Grade MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Unity Gain BW-Nom 1000
Voltage Gain-Min 25000
Base Number Matches 7 3
ECCN Code EAR99
HTS Code 8542.33.00.01
Length 9.4 mm
Seated Height-Max 3.93 mm
Width 7.62 mm

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