LM13600N vs LM13700N feature comparison

LM13600N Raytheon Semiconductor

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LM13700N National Semiconductor Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer RAYTHEON SEMICONDUCTOR NATIONAL SEMICONDUCTOR CORP
Package Description DIP, DIP16,.3 PLASTIC, DIP-16
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture TRANSCONDUCTANCE TRANSCONDUCTANCE
Bias Current-Max (IIB) @25C 5 µA 5 µA
Frequency Compensation YES YES
Input Offset Voltage-Max 5000 µV 4000 µV
JESD-30 Code R-PDIP-T16 R-PDIP-T16
JESD-609 Code e0 e0
Low-Offset NO NO
Neg Supply Voltage-Nom (Vsup) -15 V -15 V
Number of Functions 2 2
Number of Terminals 16 16
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP16,.3 DIP16,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Voltage Limit-Max 18 V 18 V
Supply Voltage-Nom (Vsup) 15 V 15 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 5 2
Part Package Code DIP
Pin Count 16
Average Bias Current-Max (IIB) 8 µA
Common-mode Reject Ratio-Min 80 dB
Common-mode Reject Ratio-Nom 110 dB
Length 21.755 mm
Moisture Sensitivity Level 1
Neg Supply Voltage Limit-Max -18 V
Packing Method RAIL
Peak Reflow Temperature (Cel) 260
Seated Height-Max 5.08 mm
Slew Rate-Nom 50 V/us
Time@Peak Reflow Temperature-Max (s) 40
Unity Gain BW-Nom 2000
Width 7.62 mm

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