LM224AN vs LF357AH feature comparison

LM224AN Samsung Semiconductor

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LF357AH General Electric Solid State

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC GENERAL ELECTRIC SOLID STATE
Package Description DIP-14 , CAN8,.2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.08 µA 0.00005 µA
Frequency Compensation YES YES (AVCL>=5)
Input Offset Voltage-Max 4000 µV 2300 µV
JESD-30 Code R-PDIP-T14 O-MBCY-W8
JESD-609 Code e0 e0
Low-Offset NO NO
Micropower YES
Number of Functions 4 1
Number of Terminals 14 8
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -25 °C
Package Body Material PLASTIC/EPOXY METAL
Package Code DIP
Package Equivalence Code DIP14,.3 CAN8,.2
Package Shape RECTANGULAR ROUND
Package Style IN-LINE CYLINDRICAL
Qualification Status Not Qualified Not Qualified
Supply Current-Max 3 mA
Supply Voltage Limit-Max 16 V
Surface Mount NO
Technology BIPOLAR
Temperature Grade OTHER COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE WIRE
Terminal Pitch 2.54 mm
Terminal Position DUAL BOTTOM
Voltage Gain-Min 25000
Base Number Matches 6 8
Low-Bias YES

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