LM339AN vs LM193FE883B feature comparison

LM339AN Samsung Semiconductor

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LM193FE883B NXP Semiconductors

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC NXP SEMICONDUCTORS
Package Description DIP-14 DIP,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.39.00.01 8542.39.00.01
Amplifier Type COMPARATOR COMPARATOR
Bias Current-Max (IIB) @25C 0.25 µA
Input Offset Voltage-Max 4000 µV 10000 µV
JESD-30 Code R-PDIP-T14 R-GDIP-T8
JESD-609 Code e0
Number of Functions 4 2
Number of Terminals 14 8
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY CERAMIC, GLASS-SEALED
Package Code DIP DIP
Package Equivalence Code DIP14,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Response Time-Nom 1400 ns 1300 ns
Supply Current-Max 2 mA
Supply Voltage Limit-Max 36 V 36 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade COMMERCIAL MILITARY
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 20 1
Part Package Code DIP
Pin Count 8
Average Bias Current-Max (IIB) 0.3 µA
Length 9.955 mm
Neg Supply Voltage Limit-Max
Neg Supply Voltage-Nom (Vsup)
Output Type OPEN-COLLECTOR
Screening Level MIL-STD-883 Class B
Seated Height-Max 5.08 mm
Width 7.62 mm

Compare LM339AN with alternatives

Compare LM193FE883B with alternatives