LM358N vs LM358N feature comparison

LM358N Samsung Semiconductor

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LM358N HTC Korea

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC TAEJIN TECHNOLOGY CO LTD
Part Package Code DIP
Package Description DIP-8 DIP-8
Pin Count 8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Samacsys Manufacturer SAMSUNG
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Average Bias Current-Max (IIB) 0.5 µA 0.5 µA
Bias Current-Max (IIB) @25C 0.25 µA
Common-mode Reject Ratio-Nom 100 dB 80 dB
Frequency Compensation YES YES
Input Offset Voltage-Max 9000 µV 9000 µV
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e0
Length 9.2 mm
Low-Offset NO NO
Neg Supply Voltage Limit-Max -18 V
Number of Functions 2 2
Number of Terminals 8 8
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified
Seated Height-Max 4.55 mm
Supply Current-Max 2 mA 2 mA
Supply Voltage Limit-Max 18 V 45 V
Supply Voltage-Nom (Vsup) 5 V 15 V
Surface Mount NO NO
Technology BIPOLAR
Temperature Grade COMMERCIAL AUTOMOTIVE
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 15000
Width 7.62 mm
Base Number Matches 1 1
Low-Bias NO
Micropower NO
Packing Method TUBE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power NO
Programmable Power NO
Slew Rate-Nom 0.7 V/us
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Unity Gain BW-Nom 700
Wideband NO

Compare LM358N with alternatives

Compare LM358N with alternatives