LM358N vs LM358N feature comparison

LM358N Samsung Semiconductor

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LM358N Texas Instruments

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC TEXAS INSTRUMENTS INC
Part Package Code DIP DIP
Package Description DIP-8 DIP-8
Pin Count 8 8
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Samacsys Manufacturer SAMSUNG Texas Instruments
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Average Bias Current-Max (IIB) 0.5 µA 0.5 µA
Bias Current-Max (IIB) @25C 0.25 µA 0.25 µA
Common-mode Reject Ratio-Nom 100 dB 85 dB
Frequency Compensation YES YES
Input Offset Voltage-Max 9000 µV 9000 µV
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e0 e0
Length 9.2 mm 9.817 mm
Low-Offset NO NO
Neg Supply Voltage Limit-Max -18 V
Number of Functions 2 2
Number of Terminals 8 8
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3 DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Seated Height-Max 4.55 mm 5.08 mm
Supply Current-Max 2 mA 2 mA
Supply Voltage Limit-Max 18 V 32 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 15000 15000
Width 7.62 mm 7.62 mm
Base Number Matches 1 5
Input Offset Current-Max (IIO) 0.05 µA
Low-Bias NO
Micropower NO
Moisture Sensitivity Level 1
Packing Method RAIL
Power NO
Programmable Power NO
Unity Gain BW-Nom 1000
Wideband NO

Compare LM358N with alternatives

Compare LM358N with alternatives