LT-1012CN
vs
LT-1012MT
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
RAYTHEON SEMICONDUCTOR
|
RAYTHEON SEMICONDUCTOR
|
| Package Description |
DIP, DIP8,.3
|
, CAN8,.2
|
| Reach Compliance Code |
unknown
|
unknown
|
| Amplifier Type |
OPERATIONAL AMPLIFIER
|
OPERATIONAL AMPLIFIER
|
| Architecture |
VOLTAGE-FEEDBACK
|
VOLTAGE-FEEDBACK
|
| Average Bias Current-Max (IIB) |
0.0003 µA
|
0.0008 µA
|
| Bias Current-Max (IIB) @25C |
0.0002 µA
|
0.00015 µA
|
| Common-mode Reject Ratio-Min |
108 dB
|
108 dB
|
| Common-mode Reject Ratio-Nom |
126 dB
|
126 dB
|
| Frequency Compensation |
YES
|
YES
|
| Input Offset Voltage-Max |
200 µV
|
250 µV
|
| JESD-30 Code |
R-PDIP-T8
|
O-MBCY-W8
|
| JESD-609 Code |
e0
|
e0
|
| Low-Bias |
YES
|
YES
|
| Low-Offset |
YES
|
YES
|
| Micropower |
YES
|
YES
|
| Neg Supply Voltage-Nom (Vsup) |
-15 V
|
-15 V
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Temperature-Max |
70 °C
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Code |
DIP
|
|
| Package Equivalence Code |
DIP8,.3
|
CAN8,.2
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
IN-LINE
|
CYLINDRICAL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Slew Rate-Min |
0.1 V/us
|
0.1 V/us
|
| Slew Rate-Nom |
0.3 V/us
|
0.3 V/us
|
| Supply Current-Max |
0.8 mA
|
0.8 mA
|
| Supply Voltage Limit-Max |
22 V
|
22 V
|
| Supply Voltage-Nom (Vsup) |
15 V
|
15 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
BIPOLAR
|
BIPOLAR
|
| Temperature Grade |
COMMERCIAL
|
MILITARY
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Unity Gain BW-Nom |
800
|
800
|
| Voltage Gain-Min |
120000
|
200000
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare LT-1012CN with alternatives
Compare LT-1012MT with alternatives