LT1001CD vs LT1001CDR feature comparison

LT1001CD Raytheon Semiconductor

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LT1001CDR Texas Instruments

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer RAYTHEON SEMICONDUCTOR TEXAS INSTRUMENTS INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.004 µA 0.004 µA
Frequency Compensation YES YES
Input Offset Voltage-Max 110 µV 110 µV
JESD-30 Code R-XDSO-G8 R-PDSO-G8
JESD-609 Code e0
Low-Offset YES YES
Neg Supply Voltage-Nom (Vsup) -15 V -15 V
Number of Functions 1 1
Number of Terminals 8 8
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Package Body Material CERAMIC PLASTIC/EPOXY
Package Code SOP SOP
Package Equivalence Code SOP8,.25 SOP8,.25
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Slew Rate-Min 0.1 V/us 0.1 V/us
Supply Current-Max 6 mA 3 mA
Supply Voltage Limit-Max 22 V 22 V
Supply Voltage-Nom (Vsup) 15 V 15 V
Surface Mount YES YES
Technology BIPOLAR BIPOLAR
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 250000 250000
Base Number Matches 3 2
Part Package Code SOIC
Package Description SO-8
Pin Count 8
Average Bias Current-Max (IIB) 0.0055 µA
Common-mode Reject Ratio-Min 106 dB
Common-mode Reject Ratio-Nom 126 dB
Length 4.9 mm
Micropower NO
Packing Method TAPE AND REEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.75 mm
Slew Rate-Nom 0.25 V/us
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Unity Gain BW-Nom 800
Width 3.9 mm

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