M470L3224BT0-LA2 vs HYMD232M646CLF6-J feature comparison

M470L3224BT0-LA2 Samsung Semiconductor

Buy Now Datasheet

HYMD232M646CLF6-J SK Hynix Inc

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC SK HYNIX INC
Part Package Code MODULE SODIMM
Package Description , DIMM, DIMM200,24
Pin Count 200 200
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode FOUR BANK PAGE BURST DUAL BANK PAGE BURST
Access Time-Max 0.75 ns 0.7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XDMA-N200 R-XZMA-N200
Memory Density 2147483648 bit 2147483648 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 200
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 32MX64 32MX64
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Self Refresh YES YES
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.3 V 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL ZIG-ZAG
Base Number Matches 1 1
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Output Characteristics 3-STATE
Package Code DIMM
Package Equivalence Code DIMM200,24
Peak Reflow Temperature (Cel) NOT SPECIFIED
Refresh Cycles 8192
Standby Current-Max 0.16 A
Supply Current-Max 1.58 mA
Terminal Pitch 0.6 mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare M470L3224BT0-LA2 with alternatives

Compare HYMD232M646CLF6-J with alternatives