MC14049UBCL
vs
CD4049UBDMSR
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA INC
|
INTERSIL CORP
|
| Package Description |
CERAMIC, DIP-16
|
DIP, DIP16,.3
|
| Reach Compliance Code |
unknown
|
compliant
|
| HTS Code |
8542.39.00.01
|
8542.39.00.01
|
| Additional Feature |
IOH = 1MA @ VOH = 2.5V; IOL = 2.6MA @ VOL = 0.4V; WITH EXTENDED INPUT VOLTAGE
|
RADIATION HARDENED; WITH EXTENDED INPUT VOLTAGE; IOL = 2.4MA @ VOL = 0.4V; IOH = 1.55MA @ VOH = 2.5V
|
| Family |
4000/14000/40000
|
4000/14000/40000
|
| JESD-30 Code |
R-GDIP-T16
|
R-CDIP-T16
|
| JESD-609 Code |
e0
|
e3
|
| Length |
19.495 mm
|
|
| Load Capacitance (CL) |
50 pF
|
50 pF
|
| Logic IC Type |
INVERTER
|
INVERTER
|
| Number of Functions |
6
|
6
|
| Number of Inputs |
1
|
1
|
| Number of Terminals |
16
|
16
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Propagation Delay (tpd) |
60 ns
|
162 ns
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
5.08 mm
|
| Supply Voltage-Max (Vsup) |
18 V
|
18 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
7.62 mm
|
7.62 mm
|
| Base Number Matches |
4
|
3
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
DIP
|
| Pin Count |
|
16
|
| Max I(ol) |
|
0.00035999999999999997 A
|
| Package Equivalence Code |
|
DIP16,.3
|
| Prop. Delay@Nom-Sup |
|
162 ns
|
| Schmitt Trigger |
|
NO
|
| Screening Level |
|
MIL-PRF-38535 Class V
|
| Total Dose |
|
100k Rad(Si) V
|
|
|
|