MCR08MT1
vs
BT148W-600R
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
NXP SEMICONDUCTORS
|
| Package Description |
,
|
PLASTIC PACKAGE-4
|
| Reach Compliance Code |
unknown
|
compliant
|
| Critical Rate of Rise of Off-State Voltage-Min |
10 V/us
|
5 V/us
|
| DC Gate Trigger Current-Max |
0.2 mA
|
0.2 mA
|
| DC Gate Trigger Voltage-Max |
0.8 V
|
1.5 V
|
| Holding Current-Max |
5 mA
|
6 mA
|
| JESD-609 Code |
e0
|
e3
|
| Leakage Current-Max |
0.2 mA
|
0.5 mA
|
| On-State Voltage-Max |
1.7 V
|
|
| Operating Temperature-Max |
110 °C
|
125 °C
|
| Operating Temperature-Min |
-40 °C
|
|
| RMS On-state Current-Max |
0.8 A
|
1 A
|
| Repetitive Peak Off-state Voltage |
600 V
|
600 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN
|
| Trigger Device Type |
TRIAC
|
SCR
|
| Base Number Matches |
4
|
2
|
| Pbfree Code |
|
Yes
|
| Pin Count |
|
4
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.30.00.80
|
| Additional Feature |
|
SENSITIVE GATE, LOGIC LEVEL COMPATIBLE
|
| Case Connection |
|
ANODE
|
| Circuit Commutated Turn-off Time-Nom |
|
100 µs
|
| Configuration |
|
SINGLE
|
| JESD-30 Code |
|
R-PDSO-G4
|
| Moisture Sensitivity Level |
|
1
|
| Non-Repetitive Pk On-state Cur |
|
10 A
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
4
|
| On-state Current-Max |
|
600 A
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Qualification Status |
|
Not Qualified
|
| Repetitive Peak Off-state Leakage Current-Max |
|
500 µA
|
| Repetitive Peak Reverse Voltage |
|
600 V
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare BT148W-600R with alternatives