MG100Q2YS42 vs BSM100GB120DN2 feature comparison

MG100Q2YS42 Toshiba America Electronic Components

Buy Now Datasheet

BSM100GB120DN2 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7
Pin Count 7 7
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature HIGH SPEED
Case Connection ISOLATED ISOLATED
Collector Current-Max (IC) 100 A 150 A
Collector-Emitter Voltage-Max 1200 V 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 500 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JESD-30 Code R-XUFM-X7 R-XUFM-X7
Number of Elements 2 2
Number of Terminals 7 7
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 700 W
Power Dissipation-Max (Abs) 700 W 800 W
Qualification Status Not Qualified Not Qualified
Rise Time-Max (tr) 600 ns
Surface Mount NO NO
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
VCEsat-Max 4 V 3.2 V
Base Number Matches 1 3
Samacsys Manufacturer Infineon
Turn-off Time-Nom (toff) 470 ns
Turn-on Time-Nom (ton) 210 ns

Compare MG100Q2YS42 with alternatives

Compare BSM100GB120DN2 with alternatives