MG25Q2YS40
vs
MG25Q2YS91
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
Package Description |
2-94D1A, 7 PIN
|
FLANGE MOUNT, R-PUFM-X7
|
Pin Count |
7
|
|
Reach Compliance Code |
unknown
|
unknown
|
Additional Feature |
HIGH SPEED
|
|
Collector Current-Max (IC) |
25 A
|
25 A
|
Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
Configuration |
SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
Fall Time-Max (tf) |
500 ns
|
1000 ns
|
JESD-30 Code |
R-PUFM-X7
|
R-PUFM-X7
|
Number of Elements |
2
|
2
|
Number of Terminals |
7
|
7
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
VCEsat-Max |
4 V
|
2.7 V
|
Base Number Matches |
1
|
1
|
ECCN Code |
|
EAR99
|
Gate-Emitter Voltage-Max |
|
20 V
|
Power Dissipation-Max (Abs) |
|
250 W
|
|
|
|
Compare MG25Q2YS40 with alternatives
Compare MG25Q2YS91 with alternatives