MG25Q6ES1
vs
BSM25GD120DN2
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
,
|
ECONOPACK-17
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
25 A
|
35 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
| Number of Elements |
6
|
6
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
4
|
| Rohs Code |
|
Yes
|
| Pin Count |
|
17
|
| Samacsys Manufacturer |
|
Infineon
|
| Case Connection |
|
ISOLATED
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| JESD-30 Code |
|
R-XUFM-X17
|
| Number of Terminals |
|
17
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
UNSPECIFIED
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
200 W
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
UNSPECIFIED
|
| Terminal Position |
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Turn-off Time-Nom (toff) |
|
450 ns
|
| Turn-on Time-Nom (ton) |
|
140 ns
|
| VCEsat-Max |
|
3.2 V
|
|
|
|
Compare MG25Q6ES1 with alternatives
Compare BSM25GD120DN2 with alternatives