MG600Q1US51
vs
BSM100GB120DN2
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TOSHIBA CORP
|
SIEMENS A G
|
Package Description |
2-109F3A, 4 PIN
|
FLANGE MOUNT, R-CUFM-X7
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
ISOLATED
|
ISOLATED
|
Collector Current-Max (IC) |
600 A
|
150 A
|
Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JESD-30 Code |
R-XUFM-X4
|
R-CUFM-X7
|
Number of Elements |
1
|
2
|
Number of Terminals |
4
|
7
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
UNSPECIFIED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
4100 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Transistor Application |
MOTOR CONTROL
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
1200 ns
|
400 ns
|
Turn-on Time-Nom (ton) |
600 ns
|
130 ns
|
VCEsat-Max |
3.6 V
|
3 V
|
Base Number Matches |
1
|
3
|
HTS Code |
|
8541.29.00.95
|
Fall Time-Max (tf) |
|
100 ns
|
Gate-Emitter Thr Voltage-Max |
|
6.5 V
|
Power Dissipation Ambient-Max |
|
1600 W
|
Rise Time-Max (tr) |
|
160 ns
|
Turn-off Time-Max (toff) |
|
600 ns
|
Turn-on Time-Max (ton) |
|
260 ns
|
|
|
|
Compare MG600Q1US51 with alternatives
Compare BSM100GB120DN2 with alternatives