MG600Q1US51 vs BSM100GB120DN2 feature comparison

MG600Q1US51 Toshiba America Electronic Components

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BSM100GB120DN2 Siemens

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP SIEMENS A G
Package Description 2-109F3A, 4 PIN FLANGE MOUNT, R-CUFM-X7
Pin Count 4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection ISOLATED ISOLATED
Collector Current-Max (IC) 600 A 150 A
Collector-Emitter Voltage-Max 1200 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V 20 V
JESD-30 Code R-XUFM-X4 R-CUFM-X7
Number of Elements 1 2
Number of Terminals 4 7
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 4100 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 1200 ns 400 ns
Turn-on Time-Nom (ton) 600 ns 130 ns
VCEsat-Max 3.6 V 3 V
Base Number Matches 1 3
HTS Code 8541.29.00.95
Fall Time-Max (tf) 100 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Power Dissipation Ambient-Max 1600 W
Rise Time-Max (tr) 160 ns
Turn-off Time-Max (toff) 600 ns
Turn-on Time-Max (ton) 260 ns

Compare MG600Q1US51 with alternatives

Compare BSM100GB120DN2 with alternatives