MJD117T4G
vs
MJD117-T1
feature comparison
| Part Life Cycle Code |
|
Obsolete
|
| Ihs Manufacturer |
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
|
SMALL OUTLINE, R-PSSO-G2
|
| Pin Count |
|
3
|
| Reach Compliance Code |
|
unknown
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.29.00.95
|
| Collector Current-Max (IC) |
|
2 A
|
| Collector-Base Capacitance-Max |
|
200 pF
|
| Collector-Emitter Voltage-Max |
|
100 V
|
| Configuration |
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
|
200
|
| JESD-30 Code |
|
R-PSSO-G2
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity/Channel Type |
|
PNP
|
| Power Dissipation Ambient-Max |
|
20 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Transistor Element Material |
|
SILICON
|
| Transition Frequency-Nom (fT) |
|
25 MHz
|
| VCEsat-Max |
|
3 V
|
| Base Number Matches |
|
1
|
|
|
|
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