MJD122T4G
vs
MJD122T4
feature comparison
| Rohs Code |
|
Yes
|
| Part Life Cycle Code |
|
Active
|
| Ihs Manufacturer |
|
STMICROELECTRONICS
|
| Part Package Code |
|
TO-252
|
| Package Description |
|
ROHS COMPLIANT, DPAK-2/3
|
| Pin Count |
|
3
|
| Reach Compliance Code |
|
not_compliant
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.29.00.95
|
| Factory Lead Time |
|
16 Weeks
|
| Samacsys Manufacturer |
|
STMicroelectronics
|
| Case Connection |
|
COLLECTOR
|
| Collector Current-Max (IC) |
|
8 A
|
| Collector-Emitter Voltage-Max |
|
100 V
|
| Configuration |
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
|
100
|
| JEDEC-95 Code |
|
TO-252
|
| JESD-30 Code |
|
R-PSSO-G2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity/Channel Type |
|
NPN
|
| Power Dissipation Ambient-Max |
|
20 W
|
| Power Dissipation-Max (Abs) |
|
20 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| VCEsat-Max |
|
4 V
|
| Base Number Matches |
|
1
|
|
|
|
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