MJD32C
vs
CJD32C
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
CENTRAL SEMICONDUCTOR CORP
|
| Package Description |
DPAK-3/2
|
SMALL OUTLINE, R-PSSO-G2
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
CASE 369C
|
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
8541.29.00.95
|
| Samacsys Manufacturer |
onsemi
|
|
| Collector Current-Max (IC) |
3 A
|
3 A
|
| Collector-Emitter Voltage-Max |
100 V
|
100 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
10
|
10
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| JESD-609 Code |
e0
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
235
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
1.56 W
|
15 W
|
| Power Dissipation-Max (Abs) |
15 W
|
15 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
3 MHz
|
3 MHz
|
| VCEsat-Max |
1.2 V
|
1.2 V
|
| Base Number Matches |
15
|
18
|
| Pbfree Code |
|
No
|
| Case Connection |
|
COLLECTOR
|
|
|
|
Compare MJD32C with alternatives
Compare CJD32C with alternatives