MMBD4448-R1-10001 vs 1N4448W-XX-TR30 feature comparison

MMBD4448-R1-10001 PanJit Semiconductor

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1N4448W-XX-TR30 Taitron Components Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC TAITRON COMPONENTS INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application FAST RECOVERY FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PDSO-G3 R-PDSO-G2
Non-rep Pk Forward Current-Max 4 A 4 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.25 W 0.5 W
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 2.5 µA 2.5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 75 V 75 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare 1N4448W-XX-TR30 with alternatives