MMBD4448H-13 vs BAS29,215 feature comparison

MMBD4448H-13 Diodes Incorporated

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BAS29,215 NXP Semiconductors

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer DIODES INC NXP SEMICONDUCTORS
Package Description R-PDSO-G3 PLASTIC PACKAGE-3
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE
Breakdown Voltage-Min 80 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Non-rep Pk Forward Current-Max 4 A 3 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.35 W 0.25 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 80 V 110 V
Reverse Current-Max 0.1 µA 0.1 µA
Reverse Recovery Time-Max 0.004 µs 0.05 µs
Reverse Test Voltage 70 V
Surface Mount YES YES
Terminal Finish TIN LEAD TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Part Package Code TO-236
Manufacturer Package Code SOT23
JEDEC-95 Code TO-236AB
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Technology AVALANCHE
Time@Peak Reflow Temperature-Max (s) 30

Compare MMBD4448H-13 with alternatives

Compare BAS29,215 with alternatives