MMBD4448HCDW
vs
HN1D02FUTE85R
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
DIODES INC
|
TOSHIBA CORP
|
| Package Description |
SOT-353, 5 PIN
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Application |
FAST RECOVERY
|
|
| Breakdown Voltage-Min |
80 V
|
|
| Configuration |
2 BANKS, COMMON CATHODE, 2 ELEMENTS
|
2 BANKS, COMMON CATHODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
1.2 V
|
| JESD-30 Code |
R-PDSO-G5
|
R-PDSO-G6
|
| JESD-609 Code |
e0
|
|
| Non-rep Pk Forward Current-Max |
4 A
|
2 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
|
| Number of Terminals |
6
|
6
|
| Operating Temperature-Max |
150 °C
|
125 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.25 A
|
0.1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.2 W
|
0.6 W
|
| Reference Standard |
MIL-STD-202
|
|
| Rep Pk Reverse Voltage-Max |
80 V
|
|
| Reverse Current-Max |
50 µA
|
0.5 µA
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Reverse Test Voltage |
75 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
8
|
1
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Not Qualified
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare HN1D02FUTE85R with alternatives