MMBD4448HSDW-H vs MMBD4448HSDW feature comparison

MMBD4448HSDW-H Formosa Microsemi Co Ltd

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MMBD4448HSDW Galaxy Microelectronics

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Part Life Cycle Code Active Active
Ihs Manufacturer FORMOSA MICROSEMI CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description R-PDSO-G6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE
Configuration 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G6 R-PDSO-F6
Number of Elements 4 4
Number of Terminals 6 6
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.2 W 0.2 W
Rep Pk Reverse Voltage-Max 80 V 80 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Base Number Matches 1 9
Rohs Code Yes
Part Package Code SOT-363
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare MMBD4448HSDW with alternatives