MMBD4448SDW vs BAV99BRW feature comparison

MMBD4448SDW Diotec Semiconductor AG

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BAV99BRW Formosa Microsemi Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer DIOTEC SEMICONDUCTOR AG FORMOSA MICROSEMI CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature LOW LEAKAGE CURRENT
Application FAST RECOVERY
Configuration 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G6 R-PDSO-G6
Non-rep Pk Forward Current-Max 2 A
Number of Elements 4 4
Number of Phases 1
Number of Terminals 6 6
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.2 W 0.2 W
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 80 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 9
Package Description PLASTIC PACKAGE-6

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